Specification	SSM3J325F,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V

SSM3J325F Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.0 A, 0.15 Ω@4.5V, SOT-346(S-Mini)

Part	Operating Temperature	Power Dissipation (Max) [Max]	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM3J325F,LF	150 °C	600 mW	SC-59 SOT-23-3 TO-236-3	P-Channel	150 mOhm	S-Mini	1.5 V 4.5 V	270 pF	MOSFET (Metal Oxide)	8 V	20 V	4.6 nC	Surface Mount	2 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23918	$ 0.34

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.0 A, 0.15 Ω@4.5V, SOT-346(S-Mini)

Technical documentation and resources