Specification	BUK9Y153-100E,115

Current - Continuous Drain (Id) @ 25°C	9.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	716 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	37 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	146 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

BUK9Y153-100E Series

N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Qualification	Power Dissipation (Max)	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type
Nexperia USA Inc. BUK9Y153-100E,115	6.8 nC	LFPAK56 Power-SO8	146 mOhm	AEC-Q101	37 W	N-Channel	10 V	5 V	Automotive	175 °C	-55 °C	2.1 V	MOSFET (Metal Oxide)	100 V	716 pF	9.4 A	SC-100 SOT-669	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7408	$ 1.25

Description

General part information

BUK9Y153-100E Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.