Discrete Semiconductor Products

IXFH70N20Q3

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-Q3 CLASS TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFH70N20Q3

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-Q3 CLASS TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH70N20Q3

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	3150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	690 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	6.5 V

IXFH70N20Q3 Series

DiscMSFT NChHiPerFET-Q3 Class TO-247AD

Part	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXFH70N30Q3	N-Channel	54 mOhm	-55 °C	150 °C	300 V	TO-247AD (IXFH)	70 A	MOSFET (Metal Oxide)	TO-247-3	98 nC	20 V	6.5 V	Through Hole	10 V	830 W
Littelfuse/Commercial Vehicle Products IXFH70N20Q3	N-Channel	40 mOhm	-55 °C	150 °C	200 V	TO-247AD (IXFH)	70 A	MOSFET (Metal Oxide)	TO-247-3		20 V	6.5 V	Through Hole	10 V		690 W	3150 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 7.69
Newark	Each	250	$ 8.68
		500	$ 8.07

Description

General part information

IXFH70N20Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources