Specification	PQMD12Z

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	230 MHz, 180 MHz
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	350 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	DFN1010B-6
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PQMD12 Series

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Resistor - Emitter Base (R2)	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]
Nexperia USA Inc. PQMD12Z	6-XFDFN Exposed Pad	100 nA	180 MHz 230 MHz	80	350 mW	47 kOhms	DFN1010B-6	150 mV	47 kOhms	50 V	1 NPN 1 PNP - Pre-Biased (Dual)	Surface Mount	100 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

100 mA output current capability

Built-in bias resistors

Simplifies circuit design

Technical documentation and resources