Discrete Semiconductor Products

IRF8313TRPBF

LTB

STRONGIRFET™ N+N DUAL ; SO-8 PACKAGE; 15.5 MOHM;

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

STRONGIRFET™ N+N DUAL ; SO-8 PACKAGE; 15.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8313TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9.7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	15.5 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.35 V

Part	FET Feature	Supplier Device Package	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Package / Case	Package / Case	Package / Case	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IRF8313TRPBF	Logic Level Gate	8-SO	2 W	15.5 mOhm	760 pF	MOSFET (Metal Oxide)	30 V	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	2.35 V	9.7 A	9 nC	Surface Mount	175 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly