Discrete Semiconductor Products

SIDC02D60C8X7SA2

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DIODE GEN PURP 600V 6A DIE

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 6A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC02D60C8X7SA2

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed [Min]	200 mA, 500 ns
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.95 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed [Min]	Package / Case	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr
INFINEON SIDC02D60C8X7SA2	600 V	Surface Mount	Die	1.95 V	-40 °C	175 ░C	200 mA 500 ns	Die	6 A	Standard	27 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 6A Surface Mount Die

Technical documentation and resources