Discrete Semiconductor Products

PN4356 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP 80VCBO 80VCEO 5.0VEBO 500MA 625MW

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT PNP 80VCBO 80VCEO 5.0VEBO 500MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	PN4356 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Supplier Device Package	Frequency - Transition	Mounting Type	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp PN4356 TIN/LEAD	TO-92-3	100 MHz	Through Hole	50 nA	PNP	50	150 °C	-65 °C	500 mA	500 mV	TO-226AA	TO-226-3 TO-92-3	625 mW	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.20
Mouser	N/A	5000	$ 0.20
		10000	$ 0.19

General part information

BIPOLAR TRANSISTORS - BJT PNP 80VCBO 80VCEO 5.0VEBO 500MA 625MW

Technical documentation and resources

No documents available