Specification	PHPT60610NYX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	240
Frequency - Transition	140 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-100, SOT-669
Power - Max [Max]	1.5 W
Qualification	AEC-Q100
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	360 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

PHPT60610NY Series

60 V, 10 A NPN high power bipolar transistor

Part	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Transistor Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Qualification	Operating Temperature	Package / Case	Grade	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Nexperia USA Inc. PHPT60610NYX	140 MHz	60 V	1.5 W	Surface Mount	NPN	LFPAK56 Power-SO8	100 nA	AEC-Q100	175 °C	SC-100 SOT-669	Automotive	360 mV	240

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	562	$ 1.37

General part information

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources