Specification	SSM3J15FS,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	9.1 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-416, SC-75
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

SSM3J15FS Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-416(SSM)

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Supplier Device Package
Toshiba Semiconductor and Storage SSM3J15FS,LF	9.1 pF	4 V	2.5 V	MOSFET (Metal Oxide)	12 Ohm	150 °C	100 mA	Surface Mount	100 mW	1.7 V	SC-75 SOT-416	30 V	20 V	P-Channel	SSM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	27018	$ 0.21

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-416(SSM)

Technical documentation and resources