Specification	XPQ1R004PB,LXHQ

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6890 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerBSFN
Power Dissipation (Max)	230 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	L-TOGL™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

XPQ1R004PB Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 200 A, 0.0010 Ω@10V, L-TOGL

Part	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Grade	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Qualification	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage XPQ1R004PB,LXHQ	175 °C	6890 pF	20 V	230 W	Automotive	L-TOGL™	3 V	N-Channel	AEC-Q101	8-PowerBSFN	1 mOhm	Surface Mount	6 V 10 V	40 V	200 A	MOSFET (Metal Oxide)	84 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4471	$ 3.63

General part information

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 200 A, 0.0010 Ω@10V, L-TOGL

Technical documentation and resources