Specification	SSM6P36TU,LF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	330 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	1.31 Ohm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6P36TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.33 A, 1.31 Ω@4.5V, SOT-363F(UF6)

Part	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	FET Feature	FET Feature	Technology	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6P36TU,LF	20 V	6-SMD Flat Leads	Surface Mount	1.31 Ohm	330 mA	150 °C	1.2 nC	Logic Level Gate	1.5 V	MOSFET (Metal Oxide)	500 mW	2 P-Channel (Dual)	43 pF	UF6	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3651	$ 0.51

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.33 A, 1.31 Ω@4.5V, SOT-363F(UF6)

Technical documentation and resources