Specification	FS13MR12W2M1HPB11BPSA1

Configuration	6 N-Channel
Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6050 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	11.7 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

FS13MR12 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case
INFINEON FS13MR12W2M1HPB11BPSA1	175 °C	-40 °C	200 nC	6 N-Channel	11.7 mOhm	50 A	Silicon Carbide (SiC)	5.15 V	6050 pF	1.2 kV	1200 V	Chassis Mount	Module

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

EasyPACK™ 2BCoolSiC™ MOSFETsixpack module 1200 V, 13 mΩ with enhanced generation 1, integrated NTC temperature sensor andPressFITcontact technology.

Technical documentation and resources