Specification	FDPF18N20FT-G

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDPF18N20FT_G Series

Power MOSFET, N-Channel, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220F

Part	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDPF18N50T	TO-220F-3	N-Channel	18 A	265 mOhm	38.5 W	2860 pF	TO-220-3 Full Pack	10 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	500 V	60 nC	5 V
ON Semiconductor FDPF18N50	TO-220F-3	N-Channel	18 A	265 mOhm	38.5 W	2860 pF	TO-220-3 Full Pack	10 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	500 V	60 nC	5 V
ON Semiconductor FDPF18N20FT-G	TO-220F-3	N-Channel	18 A	140 mOhm	35 W		TO-220-3 Full Pack	10 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	200 V	26 nC	5 V
ON Semiconductor FDPF18N20FT	TO-220F-3	N-Channel	18 A	140 mOhm	41 W		TO-220-3 Full Pack	10 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	200 V	26 nC	5 V
ON Semiconductor FDPF18N20FT-G	TO-220F-3	N-Channel	18 A	140 mOhm	35 W		TO-220-3 Full Pack	10 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	200 V	26 nC	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	393	$ 0.77
		393	$ 0.77

Description

General part information

FDPF18N20FT_G Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.