Technical Specifications
Parameters and characteristics for this part
| Specification | IPS70R600P7SAKMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.5 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 364 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 43 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | PG-TO251-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPS70R600 Series
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new700V CoolMOS™ P7superjunction MOSFET series addresses the low power SMPS market, such as mobile phonechargersor notebookadaptersby offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Documents
Technical documentation and resources