Discrete Semiconductor Products
TPN4R303NL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0043 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
TPN4R303NL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0043 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN4R303NL,L1Q |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 34 W |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) @ Id, Vgs | 4.3 mOhm |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4760 | $ 1.16 | |
Description
General part information
TPN4R303NL Series
12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0043 Ω@10V, TSON Advance, U-MOSⅧ-H
Documents
Technical documentation and resources