Discrete Semiconductor Products

IGD10N65T6ARMA1

Obsolete

IGBT TRENCH FS 650V 23A TO252-3

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Discrete Semiconductor Products

Obsolete

IGBT TRENCH FS 650V 23A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IGD10N65T6ARMA1

Current - Collector (Ic) (Max) [Max]	23 A
Current - Collector Pulsed (Icm)	42.5 A
Gate Charge	27 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	75 W
Supplier Device Package	PG-TO252-3
Switching Energy	70 µJ, 200 µJ
Td (on/off) @ 25°C [custom]	30 ns
Td (on/off) @ 25°C [custom]	106 ns
Test Condition	47 Ohm, 15 V, 400 V, 8.5 A
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Test Condition	Package / Case	IGBT Type	Gate Charge	Current - Collector (Ic) (Max) [Max]
INFINEON IGD10N65T6ARMA1	175 °C	-40 °C	30 ns	106 ns	1.9 V	75 W	70 µJ 200 µJ	42.5 A	650 V	PG-TO252-3	Surface Mount	8.5 A 15 V 47 Ohm 400 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Trench Field Stop	27 nC	23 A

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General part information

IGBT Trench Field Stop 650 V 23 A 75 W Surface Mount PG-TO252-3

Technical documentation and resources