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SIHP23N60E-GE3
Discrete Semiconductor Products

SUP60N02-4M5P-E3

Obsolete
Vishay Dale

MOSFET N-CH 20V 60A TO220AB

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SIHP23N60E-GE3
Discrete Semiconductor Products

SUP60N02-4M5P-E3

Obsolete
Vishay Dale

MOSFET N-CH 20V 60A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSUP60N02-4M5P-E3
Current - Continuous Drain (Id) (Tc)60 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)50 nC
Input Capacitance (Ciss) (Max)5950 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220AB
Power Dissipation (Max)3.75 W, 120 W
Rds On (Max)4.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 2.021m+

CAD

3D models and CAD resources for this part

Description

General part information

SUP60 Series

N-Channel 20 V 60A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources