Discrete Semiconductor Products

VI20100S-E3/4W

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DIODE SCHOTTKY 100V 20A TO262AA

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 100V 20A TO262AA

Technical Specifications

Parameters and characteristics for this part

Specification	VI20100S-E3/4W

Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	500 ns, 200 mA
Supplier Device Package	TO-262AA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	900 mV

Part	Qualification	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Grade	Technology
Vishay General Semiconductor - Diodes Division VI20100SGHM3/4W	AEC-Q101	TO-262AA	-40 °C	150 °C	350 µA	Through Hole	200 mA 500 ns	1.07 V	20 A	100 V	I2PAK TO-262-3 Long Leads TO-262AA	Automotive	Schottky
Vishay General Semiconductor - Diodes Division VI20100SHM3/4W	AEC-Q101	TO-262AA	-40 °C	150 °C	500 µA	Through Hole	200 mA 500 ns	900 mV		100 V	I2PAK TO-262-3 Long Leads TO-262AA	Automotive	Schottky
Vishay General Semiconductor - Diodes Division VI20100S-E3/4W		TO-262AA	-40 °C	150 °C	500 µA	Through Hole	200 mA 500 ns	900 mV		100 V	I2PAK TO-262-3 Long Leads TO-262AA		Schottky
Vishay General Semiconductor - Diodes Division VI20100SG-M3/4W		TO-262AA	-40 °C	150 °C	350 µA	Through Hole	200 mA 500 ns	1.07 V	20 A	100 V	I2PAK TO-262-3 Long Leads TO-262AA		Schottky

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General part information

Diode 100 V 20A Through Hole TO-262AA

Technical documentation and resources