Discrete Semiconductor Products

PN5134 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 20VCBO 10VCEO 3.5VEBO 10MA 4.0PF

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 20VCBO 10VCEO 3.5VEBO 10MA 4.0PF

Technical Specifications

Parameters and characteristics for this part

Specification	PN5134 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	10 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Central Semiconductor Corp PN5134 PBFREE	10 V	625 mW	20	Through Hole	150 °C	-65 °C	TO-226AA	TO-226-3 TO-92-3	NPN	TO-92-3	500 mA	250 mV
Central Semiconductor Corp PN5134 TIN/LEAD	10 V	625 mW	20	Through Hole	150 °C	-65 °C	TO-226AA	TO-226-3 TO-92-3	NPN	TO-92-3	500 mA	250 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.17
Mouser	N/A	5000	$ 0.17
		10000	$ 0.16

General part information

BIPOLAR TRANSISTORS - BJT NPN 20VCBO 10VCEO 3.5VEBO 10MA 4.0PF

Technical documentation and resources