Discrete Semiconductor Products

IKD06N65ET6ARMA1

Obsolete

IGBT TRENCH FS 650V 9A TO252-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT TRENCH FS 650V 9A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKD06N65ET6ARMA1

Current - Collector (Ic) (Max) [Max]	9 A
Gate Charge	13.7 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	31 W
Reverse Recovery Time (trr)	30 ns
Supplier Device Package	PG-TO252-3
Switching Energy	30 µJ, 60 µJ
Test Condition	15 V, 3 A, 400 V, 47 Ohm
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Test Condition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Gate Charge	Power - Max [Max]	Supplier Device Package	Switching Energy	Reverse Recovery Time (trr)
INFINEON IKD06N65ET6ARMA1	175 °C	-40 °C	Trench Field Stop	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.9 V	3 A 15 V 47 Ohm 400 V	9 A	Surface Mount	13.7 nC	31 W	PG-TO252-3	30 µJ 60 µJ	30 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.72

General part information

IGBT Trench Field Stop 650 V 9 A 31 W Surface Mount PG-TO252-3

Technical documentation and resources