Discrete Semiconductor Products

FF45MR12W1M1B11BOMA1

Obsolete

MOSFET 2N-CH 1200V AG-EASY1BM-2

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 1200V AG-EASY1BM-2

Technical Specifications

Parameters and characteristics for this part

Specification	FF45MR12W1M1B11BOMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	1840 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs [Max]	45 mOhm
Supplier Device Package	AG-EASY1BM-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)
INFINEON FF45MR12W1M1B11BOMA1	Module	Chassis Mount	45 mOhm	1840 pF	-40 °C	150 °C	2 N-Channel (Dual)	25 A	5.55 V	Silicon Carbide (SiC)	AG-EASY1BM-2	62 nC	1.2 kV	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET 2N-CH 1200V AG-EASY1BM-2

Technical documentation and resources

No documents available