Discrete Semiconductor Products
PNE20040EPEZ
ActiveNexperia USA Inc.
200 V, 4 A HYPERFAST RECOVERY RECTIFIER
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Discrete Semiconductor Products
PNE20040EPEZ
ActiveNexperia USA Inc.
200 V, 4 A HYPERFAST RECOVERY RECTIFIER
Technical Specifications
Parameters and characteristics for this part
| Specification | PNE20040EPEZ |
|---|---|
| Capacitance @ Vr, F | 61 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage @ Vr | 1 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Reverse Recovery Time (trr) | 30 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | CFP15B |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 930 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.06 | |
Description
General part information
PNE20040EPE Series
High power density, hyperfast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources