Discrete Semiconductor Products

SCS315AMC

LTB

DIODE SIL CARB 650V 15A TO220FM

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Discrete Semiconductor Products

LTB

DIODE SIL CARB 650V 15A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	SCS315AMC

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	75 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220FM
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.5 V

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Current - Average Rectified (Io)	Package / Case
Rohm Semiconductor SCS315AMC	75 µA	650 V	175 ░C	SiC (Silicon Carbide) Schottky	Through Hole	1.5 V	0 ns	TO-220FM	500 mA	15 A	TO-220-2 Full Pack
Rohm Semiconductor SCS315AHGC9	75 µA	650 V	175 ░C	SiC (Silicon Carbide) Schottky	Through Hole		0 ns	TO-220ACP	500 mA	15 A	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 15A Through Hole TO-220FM

Technical documentation and resources

No documents available