Discrete Semiconductor Products

PHD66NQ03LT,118

Obsolete

MOSFET N-CH 25V 66A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 66A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD66NQ03LT,118

Current - Continuous Drain (Id) (Tc)	66 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	860 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	93 W
Rds On (Max)	10.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

Part	Rds On (Max)	Mounting Type	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Vgs(th) (Max)	Technology	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	FET Type
NXP USA Inc. PHD66NQ03LT,118	10.5 mOhm	Surface Mount	20 V	10 V	5 V	DPak	2 V	MOSFET (Metal Oxide)	12 nC	-55 °C	175 °C	93 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	860 pF	66 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 66A (Tc) 93W (Tc) Surface Mount DPAK

Technical documentation and resources