Discrete Semiconductor Products

PN2907ABU

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 800 MA, 625 MW, TO-92, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 800 MA, 625 MW, TO-92, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	PN2907ABU

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max)	60 V

General Purpose Transistor PNP Silicon

Part	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor PN2907ATA	PNP	200 MHz	1.6 V	625 mW	Through Hole	TO-92-3	800 mA	TO-226-3 TO-92-3	100	-55 °C	150 °C	20 nA	60 V
ON Semiconductor PN2907ATFR	PNP	200 MHz	1.6 V	625 mW	Through Hole	TO-92-3	800 mA	TO-226-3 TO-92-3	100	-55 °C	150 °C	20 nA	60 V
ON Semiconductor PN2907ABU	PNP	200 MHz	1.6 V	625 mW	Through Hole	TO-92-3	800 mA	TO-226-3 TO-92-3	100	-55 °C	150 °C	20 nA	60 V
ON Semiconductor PN2907ATAR	PNP	200 MHz	1.6 V	625 mW	Through Hole	TO-92-3	800 mA	TO-226-3 TO-92-3	100	-55 °C	150 °C	20 nA	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP SiliconReplacement Active Part Number:PN2907A

Technical documentation and resources