Deep-Dive with AI
Search across all available documentation for this part.
DocumentsIV1Q12750T3 | Datasheet
Deep-Dive with AI
DocumentsIV1Q12750T3 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IV1Q12750T3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.8 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 78.4 W |
| Rds On (Max) @ Id, Vgs | 900 mOhm |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) [Max] | 20 V, -5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.51 | |
Description
General part information
IV1Q12750T3
SIC MOSFET, 1200V 750MOHM, TO247
Documents
Technical documentation and resources