Specification	SSM6P41FE(TE85L,F)

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	720 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.76 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	110 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6P41FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.72 A, 0.3 Ω@4.5V, SOT-563(ES6)

Part	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Configuration	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Mounting Type
Toshiba Semiconductor and Storage SSM6P41FE(TE85L,F)	Logic Level Gate	110 pF	MOSFET (Metal Oxide)	720 mA	150 °C	2 P-Channel (Dual)	20 V	ES6	1.76 nC	300 mOhm	SOT-563 SOT-666	1 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.72 A, 0.3 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources