Discrete Semiconductor Products

SIHG40N60E-GE3

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MOSFET N-CH 600V 40A TO247AC

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Discrete Semiconductor Products

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MOSFET N-CH 600V 40A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG40N60E-GE3

Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	197 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4436 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	329 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIHG40N60E-GE3	-55 °C	150 °C	10 V	TO-247AC	MOSFET (Metal Oxide)	329 W	Through Hole	4 V	N-Channel	75 mOhm	TO-247-3	30 V	197 nC	4436 pF	600 V

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General part information

N-Channel 600 V 40A (Tc) 329W (Tc) Through Hole TO-247AC

Technical documentation and resources