Discrete Semiconductor Products

SIHFL110TR-BE3

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MOSFET N-CH 100V 1.5A SOT223

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 1.5A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFL110TR-BE3

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W, 2 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Mounting Type	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIHFL110TR-BE3	TO-261-4 TO-261AA	Surface Mount	SOT-223	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	540 mOhm	N-Channel	4 V	8.3 nC	180 pF	100 V	1.5 A	2 W 3.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Technical documentation and resources