Discrete Semiconductor Products

SI7866ADP-T1-E3

Obsolete

MOSFET N-CH 20V 40A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 40A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7866ADP-T1-E3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	125 nC, 125 nC
Input Capacitance (Ciss) (Max)	5415 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5.4 W, 83 W
Rds On (Max)	2.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

Part	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max)	Vgs (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	FET Type	Package / Case	Technology	Package Name
Vishay Dale SI7866ADP-T1-E3	2.4 mOhm	-55 °C	150 °C	40 A	10 V	4.5 V	20 V	5.4 W 83 W	2.2 V	20 V	125 nC 125 nC	5415 pF	Surface Mount	N-Channel	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8
Vishay Dale SI7866ADP-T1-GE3	2.4 mOhm	-55 °C	150 °C	40 A	10 V	4.5 V	20 V	5.4 W 83 W	2.2 V	20 V	125 nC 125 nC	5415 pF	Surface Mount	N-Channel	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources