Discrete Semiconductor Products
TK125V65Z,LQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.125 Ω@10V, DFN 8 X 8, DTMOSⅥ
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Discrete Semiconductor Products
TK125V65Z,LQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.125 Ω@10V, DFN 8 X 8, DTMOSⅥ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK125V65Z,LQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 4-VSFN Exposed Pad |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs [Max] | 125 mOhm |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 9890 | $ 5.86 | |
Description
General part information
TK125V65Z Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.125 Ω@10V, DFN 8 x 8, DTMOSⅥ
Documents
Technical documentation and resources