Specification	CTS05F40,L3F

Capacitance @ Vr, F	28 pF
Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	SOD-882
Speed	500 ns, 200 mA
Supplier Device Package	CST2
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If [Max]	810 mV

CTS05F40 Series

Diodes, 40 V/0.5 A Schottky Barrier Diode, SOD-882(CST2)

Part	Mounting Type	Speed	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Technology
Toshiba Semiconductor and Storage CTS05F40,L3F	Surface Mount	200 mA 500 ns	150 °C	CST2	40 V	15 µA	SOD-882	500 mA	810 mV	28 pF	Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3215	$ 0.25

General part information

Diodes, 40 V/0.5 A Schottky Barrier Diode, SOD-882(CST2)

Technical documentation and resources