
Discrete Semiconductor Products
NVMFS5C612NT1G
ActiveON Semiconductor
NFET SO8FL 60V 235A 1.5MO/ REEL ROHS COMPLIANT: YES
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Discrete Semiconductor Products
NVMFS5C612NT1G
ActiveON Semiconductor
NFET SO8FL 60V 235A 1.5MO/ REEL ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFS5C612NT1G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A, 225 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Power Dissipation (Max) | 3.8 W, 167 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.65 mOhm |
| Supplier Device Package | 5-DFN (5x6) |
| Supplier Device Package | 8-SOFL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NVMFS5C612N Series
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources