Discrete Semiconductor Products

SQ3419EV-T1_BE3

Obsolete

MOSFET P-CH 40V 6.9A 6TSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 40V 6.9A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3419EV-T1_BE3

Current - Continuous Drain (Id) (Tc)	6.9 A, 6.9 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	11.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	990 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max)	58 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Technology	Qualification	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	FET Type	Package Name	Gate Charge (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Vishay Dale SQ3419EV-T1_BE3	6.9 A 6.9 A	58 mOhm	MOSFET (Metal Oxide)	AEC-Q101	2.5 V	990 pF	Surface Mount	P-Channel	6-TSOP	11.3 nC	SOT-23-6 Thin TSOT-23-6	-55 °C	175 °C	Automotive	10 V	4.5 V	20 V	40 V	5 W
Vishay Dale SQ3419EEV-T1-GE3	7.4 A	50 mOhm	MOSFET (Metal Oxide)	AEC-Q101	2.5 V	1065 pF	Surface Mount	P-Channel	6-TSOP	15 nC	SOT-23-6 Thin TSOT-23-6	-55 °C	175 °C	Automotive	10 V	4.5 V	12 V	40 V	5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 40 V 6.9A (Tc) 5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources