Discrete Semiconductor Products
PSMN2R6-100SSFJ
ActiveNexperia USA Inc.
NEXTPOWER 100 V, 2.6 MOHM, 200 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE
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Discrete Semiconductor Products
PSMN2R6-100SSFJ
ActiveNexperia USA Inc.
NEXTPOWER 100 V, 2.6 MOHM, 200 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R6-100SSFJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 191 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 12838 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1235 |
| Power Dissipation (Max) | 341 W |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1998 | $ 6.93 | |
Description
General part information
PSMN2R6-100SSF Series
NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Documents
Technical documentation and resources