Discrete Semiconductor Products

PHP29N08T,127

Obsolete

MOSFET N-CH 75V 27A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 27A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP29N08T,127

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	11 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	5 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PHP29N08T,127	50 mOhm	TO-220AB	30 V	19 nC	Through Hole	N-Channel	TO-220-3	11 V	-55 °C	175 ░C	810 pF	75 V	5 V	88 W	MOSFET (Metal Oxide)	27 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 27A (Tc) 88W (Tc) Through Hole TO-220AB

Technical documentation and resources