Discrete Semiconductor Products

IRF6726MTRPBF

Obsolete

TRANS MOSFET N-CH SI 30V 32A 7-PIN DIRECT-FET MT T/R

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Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH SI 30V 32A 7-PIN DIRECT-FET MT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6726MTRPBF

Current - Continuous Drain (Id) @ 25°C	32 A, 180 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	77 nC
Input Capacitance (Ciss) (Max) @ Vds	6140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MT
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	DIRECTFET™ MT
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IRF6726MTRPBF	N-Channel	30 V	-40 °C	150 °C	32 A 180 A	1.7 mOhm	Surface Mount	MOSFET (Metal Oxide)	20 V	77 nC	DIRECTFET™ MT	2.35 V	DirectFET™ Isometric MT	6140 pF	2.8 W 89 W	4.5 V 10 V
INFINEON IRF6726MTRPBF	N-Channel	30 V	-40 °C	150 °C	32 A 180 A	1.7 mOhm	Surface Mount	MOSFET (Metal Oxide)	20 V	77 nC	DIRECTFET™ MT	2.35 V	DirectFET™ Isometric MT	6140 pF	2.8 W 89 W	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

Technical documentation and resources