Specification	HMC1126

Current - Supply	65 mA
Frequency [Max]	50 GHz
Frequency [Min]	2 GHz
Gain	11 dB
Mounting Type	Surface Mount
Noise Figure	5 dB
P1dB	17.5 dBm
Package / Case	Die
RF Type	VSAT
Supplier Device Package	Die

HMC1126-Die Series

GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz

Part	Noise Figure	Gain	Current - Supply	Package / Case	Mounting Type	Test Frequency	Frequency [Max]	Frequency [Min]	P1dB	Supplier Device Package	RF Type
Analog Devices Inc./Maxim Integrated HMC1126-SX	4.5 dB	11 dB	65 mA	Die	Surface Mount	10 GHz	50 GHz	2 GHz	17.5 dBm	Die	VSAT
Analog Devices Inc./Maxim Integrated HMC1126	5 dB	11 dB	65 mA	Die	Surface Mount		50 GHz	2 GHz	17.5 dBm	Die	VSAT

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Description

General part information

HMC1126-Die Series

The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.The HMC1126 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONSTest instrumentationMicrowave radios and VSATsMilitary and spaceTelecommunications infrastructureFiber optics

Documents

Technical documentation and resources

HMC1126-Die: GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz Data Sheet (Rev.C)

Data Sheet