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BAS21QB-QZ
Discrete Semiconductor Products

BAS21QB-QZ

Obsolete
Nexperia USA Inc.

DIODE STD 200V 250MA DFN1110D3

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BAS21QB-QZ
Discrete Semiconductor Products

BAS21QB-QZ

Obsolete
Nexperia USA Inc.

DIODE STD 200V 250MA DFN1110D3

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS21QB-QZ
Capacitance @ Vr, F5 pF
Current - Average Rectified (Io)250 mA
Current - Reverse Leakage @ Vr100 nA
GradeAutomotive
Mounting TypeWettable Flank, Surface Mount
Operating Temperature - Junction150 ¯C
Package / Case3-XDFN Exposed Pad
QualificationAEC-Q101
Reverse Recovery Time (trr)50 ns
Speed500 ns, 200 mA
Supplier Device PackageDFN1110D-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 30000$ 0.05

Description

General part information

BAS21QB-Q Series

High-voltage switching diode, encapsulated in an ultra small DFN1110D-3 (SOT8015, JEDEC MO340-BA) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.