Specification	PSMN1R0-30YLC,115

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	103.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6645 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	272 W
Rds On (Max) @ Id, Vgs	1.15 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN1R0-30YLC Series

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)
Nexperia USA Inc. PSMN1R0-30YLC,115	175 °C	-55 °C	LFPAK56 Power-SO8	100 A	4.5 V 10 V	272 W	SC-100 SOT-669	30 V	N-Channel	MOSFET (Metal Oxide)	103.5 nC	6645 pF	Surface Mount	1.15 mOhm	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23134	$ 3.70

Description

General part information

PSMN1R0-30YLC Series

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.