Discrete Semiconductor Products

PMPB29XNE,115

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MOSFET N-CH 30V 5A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET N-CH 30V 5A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB29XNE,115

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.7 W, 12.5 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	FET Type	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Rds On (Max) @ Id, Vgs [Max]	Qualification
Freescale Semiconductor - NXP PMPB29XNE,115	N-Channel	900 mV	MOSFET (Metal Oxide)	1150 pF	1.7 W 12.5 W	Surface Mount	DFN2020MD-6	30 V	12 V	6-UDFN Exposed Pad	1.8 V 4.5 V	33 mOhm	5 A	18.6 nC	-55 °C	150 °C
Freescale Semiconductor - NXP PMPB29XPEAX	P-Channel	1 V	MOSFET (Metal Oxide)	2970 pF	1.7 W 12.5 W	Surface Mount	DFN2020MD-6	20 V	12 V	6-UDFN Exposed Pad	1.8 V 4.5 V		5 A	45 nC	-55 °C	150 °C	Automotive	32.5 mOhm	AEC-Q101

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General part information

N-Channel 30 V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources