Discrete Semiconductor Products

IRF60SC241ARMA1

LTB

INFINEON

STRONGIRFET™ N-CHANNEL ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.3 MOHM;

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Discrete Semiconductor Products

IRF60SC241ARMA1

LTB

INFINEON

STRONGIRFET™ N-CHANNEL ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.3 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF60SC241ARMA1

Current - Continuous Drain (Id) @ 25°C	360 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	388 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	16000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	417 W, 2.4 W
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

IRF60SC241 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IRF60SC241ARMA1	6 V 10 V	388 nC	D2PAK (6 Leads + Tab) TO-263-7	360 A	3.7 V	N-Channel	175 °C	-55 °C	MOSFET (Metal Oxide)	1.3 mOhm	60 V	2.4 W 417 W	Surface Mount	PG-TO263-7	20 V	16000 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 3.20
		10	$ 2.61
		50	$ 2.50
		100	$ 1.99
		200	$ 1.90
Digikey	Cut Tape (CT)	1	$ 5.18
		10	$ 3.45
		100	$ 2.47
	Digi-Reel®	1	$ 5.18
		10	$ 3.45
		100	$ 2.47
	N/A	0	$ 5.13
	Tape & Reel (TR)	800	$ 1.98

Description

General part information

IRF60SC241 Series

Infineon’s latest 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on)making them the ideal solution for high current battery powered applications.

Documents

Technical documentation and resources