Discrete Semiconductor Products

SPW17N80C3A

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MOSFET N-CH 800V 17A TO247-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 800V 17A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPW17N80C3A

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	177 nC
Input Capacitance (Ciss) (Max) @ Vds	2320 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	227 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type
INFINEON SPW17N80C3A	N-Channel	290 mOhm	177 nC	10 V	17 A	800 V	PG-TO247-3-1	3.9 V	TO-247-3	227 W	150 °C	-55 °C	MOSFET (Metal Oxide)	2320 pF	20 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 17A (Tc) 227W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources