Specification	TBAT54A,LM

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	2 çA
Diode Configuration	1 Pair Common Anode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	1.5 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	SOT-23-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	580 mV

TBAT54A Series

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOT-23(SOT23)

Part	Technology	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Mounting Type	Package / Case	Diode Configuration	Speed	Speed	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage TBAT54A,LM	Schottky	150 °C	SOT-23-3	580 mV	1.5 ns	30 V	100 mA	Surface Mount	SC-59 SOT-23-3 TO-236-3	1 Pair Common Anode	200 mA	Any Speed	2 çA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1181	$ 0.10

General part information

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOT-23(SOT23)

Technical documentation and resources