Discrete Semiconductor Products

GES6016 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT 70VCBO 70VCES 60VCEO 5.0VEBO 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT 70VCBO 70VCES 60VCEO 5.0VEBO 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	GES6016 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	170
Frequency - Transition	425 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Frequency - Transition	Package / Case	Package / Case	Supplier Device Package	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp GES6016 TIN/LEAD	425 MHz	TO-226AA	TO-226-3 TO-92-3	TO-92-3	625 mW	150 °C	-65 °C	60 V	10 nA	NPN	Through Hole	500 mV	800 mA	170

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.51
Mouser	N/A	2500	$ 0.47

General part information

BIPOLAR TRANSISTORS - BJT 70VCBO 70VCES 60VCEO 5.0VEBO 625MW

Technical documentation and resources

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