Discrete Semiconductor Products

SI4632DY-T1-E3

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MOSFET N-CH 25V 40A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 25V 40A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4632DY-T1-E3

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	161 nC
Input Capacitance (Ciss) (Max) @ Vds	11175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	7.8 W, 3.5 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.6 V

Part	Power Dissipation (Max)	Vgs (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI4632DY-T1-E3	3.5 W 7.8 W	16 V	N-Channel	MOSFET (Metal Oxide)	25 V	11175 pF	8-SOIC	8-SOIC	3.9 mm	0.154 in	161 nC	2.6 V	-55 °C	150 °C	Surface Mount	2.7 mOhm	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Technical documentation and resources