Discrete Semiconductor Products

IRFS4510TRLPBF

Active

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 13.9 MOHM;

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 13.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS4510TRLPBF

Current - Continuous Drain (Id) @ 25°C	61 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	3180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	13.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	FET Type
INFINEON IRFS4510TRLPBF	4 V	87 nC	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	13.9 mOhm	10 V	Surface Mount	61 A	20 V	3180 pF	100 V	140 W	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 61A (Tc) 140W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources