Discrete Semiconductor Products

SUM18N25-165-E3

Obsolete

MOSFET N-CH 250V 18A TO263

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 18A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM18N25-165-E3

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	45 nC
Input Capacitance (Ciss) (Max)	1950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	150 W, 3.75 W
Rds On (Max)	165 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package Name	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	FET Type	Rds On (Max)
Vishay Dale SUM18N25-165-E3	Surface Mount	4 V	45 nC	MOSFET (Metal Oxide)	20 V	10 V	-55 °C	175 °C	1950 pF	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.75 W 150 W	250 V	18 A	N-Channel	165 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 250 V 18A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available