2SK4161D

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Sanken Electric USA Inc.

MOS FET 60V/100A/0.0038

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Discrete Semiconductor Products

Active

Sanken Electric USA Inc.

MOS FET 60V/100A/0.0038

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4161D

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Input Capacitance (Ciss) (Max) @ Vds	10000 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	132 W
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology
Sanken Electric USA Inc. 2SK4161D	60 V	145 nC	N-Channel	SC-65-3 TO-3P-3	10000 pF	Through Hole	175 °C	TO-3P	132 W	100 A	8 V 10 V	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1020	$ 2.52

General part information

N-Channel 60 V 100A (Tc) 132W (Tc) Through Hole TO-3P

Technical documentation and resources