Discrete Semiconductor Products

2SK4161D

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MOS FET 60V/100A/0.0038

Discrete Semiconductor Products

Active

MOS FET 60V/100A/0.0038

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4161D

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	8 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	145 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	10000 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-3P-3, SC-65-3
Package Name	TO-3P
Power Dissipation (Max)	132 W
Qualification	AEC-Q101
Rds On (Max)	155 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

Part	Drain to Source Voltage (Vdss)	Grade	Operating Temperature	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	FET Type	Technology	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Qualification	Vgs (Max)	Gate Charge (Max)	Package / Case	Rds On (Max)
Sanken Electric USA Inc. 2SK4161D	60 V	Automotive	175 °C	132 W	10000 pF	4 V	N-Channel	MOSFET (Metal Oxide)	Through Hole	100 A	10 V	8 V	TO-3P	AEC-Q101	30 V	145 nC	SC-65-3 TO-3P-3	155 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	1020	$ 2.80	<4d

3D models and CAD resources for this part

General part information

N-Channel 60 V 100A (Tc) 132W (Tc) Through Hole TO-3P

Technical documentation and resources