Discrete Semiconductor Products

2SK4161D

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MOS FET 60V/100A/0.0038

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Discrete Semiconductor Products

Active

MOS FET 60V/100A/0.0038

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4161D

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	10000 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	132 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Qualification	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Operating Temperature	Grade	Drain to Source Voltage (Vdss)
Sanken Electric USA Inc. 2SK4161D	155 mOhm	SC-65-3 TO-3P-3	145 nC	30 V	AEC-Q101	TO-3P	8 V 10 V	100 A	Through Hole	MOSFET (Metal Oxide)	N-Channel	10000 pF	132 W	175 °C	Automotive	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 100A (Tc) 132W (Tc) Through Hole TO-3P

Technical documentation and resources