Specification	PSMN3R3-80YSFX

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	108 nC
Input Capacitance (Ciss) (Max) @ Vds	6986 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN3R3-80YSF Series

NextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET in LFPAK56 package

Part	Technology	Package / Case	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Nexperia USA Inc. PSMN3R3-80YSFX	MOSFET (Metal Oxide)	SC-100 SOT-669	N-Channel	175 °C	-55 °C	3.1 mOhm	10 V	80 V	20 V	6986 pF	108 nC	Surface Mount	300 W	160 A	LFPAK56 Power-SO8

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1655	$ 2.59

General part information

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.

Technical documentation and resources